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Soft Switching Series
IHW30N60T q
C
Low Loss DuoPack : IGBT in TrenchStop(R) technology with optimised diode
Features: * Very low VCE(sat) 1.5 V (typ.) * Maximum Junction Temperature 175 C * Short circuit withstand time - 5s * TrenchStop(R) and Fieldstop technology for 600 V applications offers : - very tight parameter distribution - high ruggedness, temperature stable behavior - low VCE(sat) * Positive temperature coefficient in VCE(sat) * Low EMI * Low Gate Charge * Qualified according to JEDEC1 for target applications * Pb-free lead plating; RoHS compliant * Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/ Applications: * Inductive Cooking * Soft Switching Applications Type IHW30N60T VCE 600V IC 30A VCE(sat),Tj=25C 1.5V Tj,max 175C Marking H30T60 Package PG-TO-247-3
G
E
PG-TO-247-3
Maximum Ratings Parameter Collector-emitter voltage DC collector current, limited by Tjmax TC = 25C TC = 100C Pulsed collector current, tp limited by Tjmax Turn off safe operating area (VCE 600V, Tj 175C) Diode forward current TC = 25C TC = 100C Diode pulsed current, tp limited by Tjmax Gate-emitter voltage Transient Gate-emitter voltage (tp < 5 ms) Short circuit withstand time
2)
Symbol VCE IC
Value 600 60 30
Unit V A
ICpuls IF
90 90 23 13
IFpuls VGE tSC Ptot Tj Tstg -
30 20 25 5 187 -40...+175 -55...+175 260 s W C V
VGE = 15V, VCC 400V, Tj 150C Power dissipation TC = 25C Operating junction temperature Storage temperature Soldering temperature, 1.6mm (0.063 in.) from case for 10s
1 2)
J-STD-020 and JESD-022 Allowed number of short circuits: <1000; time between short circuits: >1s. 1 Rev. 2.2 Sep. 08
Power Semiconductors
Soft Switching Series
Thermal Resistance Parameter Characteristic IGBT thermal resistance, junction - case Diode thermal resistance, junction - case Thermal resistance, junction - ambient RthJC RthJCD RthJA Symbol Conditions
IHW30N60T q
Max. Value 0.8 1.1 40 Unit K/W
Electrical Characteristic, at Tj = 25 C, unless otherwise specified Parameter Static Characteristic Collector-emitter breakdown voltage Collector-emitter saturation voltage V ( B R ) C E S V G E = 0 V , I C =0.5mA VCE(sat) V G E = 15 V, I C =30A T j = 25C T j = 175 C Diode forward voltage VF VGE=0V, IF=10A T j = 25C T j = 150 C T j = 175 C Gate-emitter threshold voltage Zero gate voltage collector current VGE(th) ICES I C =0 .43mA, V C E =V G E V C E = 60 0 V, VGE=0V T j = 25C T j = 175 C V C E = 0 V , V G E =20V V C E =20V, I C =30A 4.1 1.1 1.0 1.0 4.9 1.3 5.7 A 16.7 40 1000 100 nA S 1.5 1.9 2 600 V Symbol Conditions Value min. Typ. max. Unit
Gate-emitter leakage current Transconductance Integrated gate resistor Dynamic Characteristic Input capacitance Output capacitance Reverse transfer capacitance Gate charge
IGES gfs RGint
Ciss Coss Crss QGate
V C E =25V, VGE=0V, f=1MHz V C C = 48 0 V, I C =30A V G E =15V
-
1630 108 50 167 13 275
-
pF
nC nH A
Internal emitter inductance LE measured 5mm (0.197 in.) from case Short circuit collector current1) IC(SC) V G E =15V,t S C 5 s V C C = 400 V, T j = 1 50 C
-
1)
Allowed number of short circuits: <1000; time between short circuits: >1s. 2 Rev. 2.2 Sep. 08
Power Semiconductors
Soft Switching Series
Switching Characteristic, Inductive Load, at Tj=25 C Parameter IGBT Characteristic Turn-on delay time Rise time Turn-off delay time Fall time Turn-on energy Turn-off energy Total switching energy td(on) tr td(off) tf Eon Eoff Ets T j = 25C , V C C = 40 0 V, I C =30A, V G E = 0 /1 5 V, R G = 1 0 .6 , L 1 ) =1 36nH, C 1 ) =39pF Symbol Conditions
IHW30N60T q
Value min. Typ. 23 21 254 46 0.77 0.77 max. mJ Unit
ns
Switching Characteristic, Inductive Load, at Tj=175 C Parameter IGBT Characteristic Turn-on delay time Rise time Turn-off delay time Fall time Turn-on energy Turn-off energy Total switching energy td(on) tr td(off) tf Eon Eoff Ets T j = 175 C , V C C = 40 0 V, I C =30A, V G E = 0 /1 5 V, R G = 1 0 .6 L 1 ) =1 36nH, C 1 ) =39pF 24 26 292 90 1.1 1.1 mJ ns Symbol Conditions Value min. Typ. max. Unit
1)
Leakage inductance L a nd Stray capacity C due to dynamic test circuit in Figure E. 3 Rev. 2.2 Sep. 08
Power Semiconductors
Soft Switching Series
IHW30N60T q
tp=2s 10s
90A 80A
IC, COLLECTOR CURRENT
IC, COLLECTOR CURRENT
70A 60A 50A 40A 30A 20A 10A 0A 100Hz 1kHz 10kHz 100kHz TC=80C TC=110C
10A 50s
Ic
1A DC
1ms 10ms
0.1A 1V
10V
100V
1000V
f, SWITCHING FREQUENCY Figure 1. Collector current as a function of switching frequency for triangular current (Eon = 0, hard turn-off) (Tj 175C, D = 0.5, VCE = 400V, VGE = 0/+15V, RG = 10)
VCE, COLLECTOR-EMITTER VOLTAGE Figure 2. Safe operating area (D = 0, TC = 25C, Tj 175C; VGE=15V)
160W
50A
IC, COLLECTOR CURRENT
50C 75C 100C 125C 150C
POWER DISSIPATION
40A
120W
30A
80W
20A
Ptot,
40W
10A
0W 25C
0A 25C
75C
125C
TC, CASE TEMPERATURE Figure 3. Power dissipation as a function of case temperature (Tj 175C)
TC, CASE TEMPERATURE Figure 4. Collector current as a function of case temperature (VGE 15V, Tj 175C)
Power Semiconductors
4
Rev. 2.2 Sep. 08
Soft Switching Series
80A 70A 50A V G E =20V 15V 13V 11V 9V 7V V G E =20V
IHW30N60T q
IC, COLLECTOR CURRENT
IC, COLLECTOR CURRENT
60A 50A 40A 30A 20A 10A 0A
40A
15V 13V
30A
11V 9V
20A
7V
10A
0A 0V 1V 2V 3V 0V 1V 2V 3V
VCE, COLLECTOR-EMITTER VOLTAGE Figure 5. Typical output characteristic (Tj = 25C)
VCE, COLLECTOR-EMITTER VOLTAGE Figure 6. Typical output characteristic (Tj = 175C)
VCE(sat), COLLECTOR-EMITT SATURATION VOLTAGE
50A
2.5V
IC =60A
IC, COLLECTOR CURRENT
40A
2.0V IC =30A
30A
1.5V
20A T J = 1 7 5 C 2 5 C 0A
1.0V
IC =15A
10A
0.5V
0.0V
0V
2V
4V
6V
8V
0C
50C
100C
150C
VGE, GATE-EMITTER VOLTAGE Figure 7. Typical transfer characteristic (VCE=10V)
TJ, JUNCTION TEMPERATURE Figure 8. Typical collector-emitter saturation voltage as a function of junction temperature (VGE = 15V)
Power Semiconductors
5
Rev. 2.2 Sep. 08
Soft Switching Series
IHW30N60T q
t d(off)
t d(off)
t, SWITCHING TIMES
t, SWITCHING TIMES
100ns
tf
t d(on)
tf 100ns
10ns tr
t d(on)
tr
1ns
0A
10A
20A
30A
10ns
10
20
30
40
IC, COLLECTOR CURRENT Figure 9. Typical switching times as a function of collector current (inductive load, TJ=175C, VCE = 400V, VGE = 0/15V, RG = 10, Dynamic test circuit in Figure E)
RG, GATE RESISTOR Figure 10. Typical switching times as a function of gate resistor (inductive load, TJ = 175C, VCE= 400V, VGE = 0/15V, IC = 30A, Dynamic test circuit in Figure E)
7V 6V m ax. 5V 4V 3V 2V 1V 0V -50C m in. typ.
t d(off)
100ns tf
t d(on)
tr 10ns 25C
VGE(th), GATE-EMITT TRSHOLD VOLTAGE
t, SWITCHING TIMES
50C
75C
100C 125C 150C
0C
50C
100C
150C
TJ, JUNCTION TEMPERATURE Figure 11. Typical switching times as a function of junction temperature (inductive load, VCE = 400V, VGE = 0/15V, IC = 30A, RG=10, Dynamic test circuit in Figure E)
TJ, JUNCTION TEMPERATURE Figure 12. Gate-emitter threshold voltage as a function of junction temperature (IC = 0.43mA)
Power Semiconductors
6
Rev. 2.2 Sep. 08
Soft Switching Series
IHW30N60T q
E, SWITCHING ENERGY LOSSES
E, SWITCHING ENERGY LOSSES
2.0mJ Eoff 1.5mJ
1,5mJ
Eoff
1,0mJ
1.0mJ
0,5mJ
0.5mJ
0.0mJ
0,0mJ
0A 10A 20A 30A 40A 50A
0 10 20 30 40
IC, COLLECTOR CURRENT Figure 13. Typical switching energy losses as a function of collector current (inductive load, TJ = 175C, VCE = 400V, VGE = 0/15V, RG = 10, Dynamic test circuit in Figure E)
RG, GATE RESISTOR Figure 14. Typical switching energy losses as a function of gate resistor (inductive load, TJ = 175C, VCE = 400V, VGE = 0/15V, IC = 30A, Dynamic test circuit in Figure E)
1.0mJ
1,75mJ
E, SWITCHING ENERGY LOSSES
E, SWITCHING ENERGY LOSSES
Eoff
1,50mJ Eoff 1,25mJ 1,00mJ 0,75mJ 0,50mJ 0,25mJ 0,00mJ 300V
0.5mJ
0.0mJ 25C
50C
75C
100C 125C 150C
350V
400V
450V
500V
550V
TJ, JUNCTION TEMPERATURE Figure 15. Typical switching energy losses as a function of junction temperature (inductive load, VCE = 400V, VGE = 0/15V, IC = 30A, RG = 10, Dynamic test circuit in Figure E)
VCE, COLLECTOR-EMITTER VOLTAGE Figure 16. Typical switching energy losses as a function of collector emitter voltage (inductive load, TJ = 175C, VGE = 0/15V, IC = 30A, RG = 10, Dynamic test circuit in Figure E)
Power Semiconductors
7
Rev. 2.2 Sep. 08
Soft Switching Series
IHW30N60T q
C iss
VGE, GATE-EMITTER VOLTAGE
1 5V 12 0V 1 0V 48 0V
1nF
c, CAPACITANCE
5V
100pF
C oss
C rss
0V 0 nC 30 nC 60 nC 90 nC 12 0n C 15 0n C 18 0n
0V
10V
20V
30V
40V
QGE, GATE CHARGE Figure 17. Typical gate charge (IC=30 A)
VCE, COLLECTOR-EMITTER VOLTAGE Figure 18. Typical capacitance as a function of collector-emitter voltage (VGE=0V, f = 1 MHz)
12s
IC(sc), short circuit COLLECTOR CURRENT
400A
SHORT CIRCUIT WITHSTAND TIME
10s 8s 6s 4s 2s 0s 10V
300A
200A
tSC,
100A
0A 12V
14V
16V
18V
11V
12V
13V
14V
VGE, GATE-EMITTETR VOLTAGE Figure 19. Typical short circuit collector current as a function of gateemitter voltage (VCE 400V, Tj 150C)
VGE, GATE-EMITETR VOLTAGE Figure 20. Short circuit withstand time as a function of gate-emitter voltage (VCE=600V, start at TJ=25C, TJmax<150C)
Power Semiconductors
8
Rev. 2.2 Sep. 08
Soft Switching Series
IHW30N60T q
D=0.5
ZthJC, TRANSIENT THERMAL RESISTANCE
ZthJC, TRANSIENT THERMAL RESISTANCE
10 K/W D=0.5
0
0.2 10 K/W
-1
0.1 0.05
R,(K/W) 0.29566 0.25779 0.19382 0.05279
, (s) -2 6.478*10 -3 6.12*10 -4 4.679*10 -5 6.45*10
R2
0.2 0.1 10 K/W
-1
0.02 10 K/W
-2
R1
0.05 0.02 0.01 single pulse
R,(K/W) 0.0715 0.2222 0.4265 0.364 0.0181
R1
, (s) -2 9.45*10 -2 2.55*10 -3 3.6*10 -4 5.1*10 -4 1.09*10
R2
0.01
C1=1/R1 C2=2/R2
single pulse
C1= 1/R1
C2= 2/R2
1s
10s
100s
1ms
10ms 100ms
10s
100s
1ms
10ms
100ms
tP, PULSE WIDTH Figure 21. IGBT transient thermal resistance (D = tp / T)
tP, PULSE WIDTH Figure 22. Diode transient thermal impedance as a function of pulse width (D=tP/T)
TJ=25C 30A 175C
IF=20A 10A
VF, FORWARD VOLTAGE
IF, FORWARD CURRENT
1.0V 3A
20A
0.5V
10A
0A
0.0V
0.5V
1.0V
1.5V
0.0V -50C
0C
50C
100C
150C
VF, FORWARD VOLTAGE Figure 23. Typical diode forward current as a function of forward voltage
TJ, JUNCTION TEMPERATURE Figure 24. Typical diode forward voltage as a function of junction temperature
Power Semiconductors
9
Rev. 2.2 Sep. 08
Soft Switching Series
IHW30N60T q
PG-TO247-3
M
M
MIN 4.90 2.27 1.85 1.07 1.90 1.90 2.87 2.87 0.55 20.82 16.25 1.05 15.70 13.10 3.68 1.68 5.44 3 19.80 4.17 3.50 5.49 6.04
MAX 5.16 2.53 2.11 1.33 2.41 2.16 3.38 3.13 0.68 21.10 17.65 1.35 16.03 14.15 5.10 2.60
MIN 0.193 0.089 0.073 0.042 0.075 0.075 0.113 0.113 0.022 0.820 0.640 0.041 0.618 0.516 0.145 0.066 0.214 3
MAX 0.203 0.099 0.083 0.052 0.095 0.085 0.133 0.123 0.027 0.831 0.695 0.053 0.631 0.557 0.201 0.102
Z8B00003327 0
0
55 7.5mm
20.31 4.47 3.70 6.00 6.30
0.780 0.164 0.138 0.216 0.238
0.799 0.176 0.146 0.236 0.248
17-12-2007 03
Power Semiconductors
10
Rev. 2.2 Sep. 08
Soft Switching Series
i,v diF /dt
IHW30N60T q
tr r =tS +tF Qr r =QS +QF tr r
IF
tS QS
tF 10% Ir r m t VR
Ir r m
QF
dir r /dt 90% Ir r m
Figure C. Definition of diodes switching characteristics
1
Tj (t) p(t)
r1
r2
2
n
rn
r1
r2
rn
Figure A. Definition of switching times
TC
Figure D. Thermal equivalent circuit
Figure B. Definition of switching losses
Figure E. Dynamic test circuit
Power Semiconductors
11
Rev. 2.2 Sep. 08
Soft Switching Series
IHW30N60T q
Published by Infineon Technologies AG 81726 Munich, Germany (c) 2008 Infineon Technologies AG All Rights Reserved.
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Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com).
Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.
Power Semiconductors
12
Rev. 2.2 Sep. 08

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